Misbahul Munir, Rahmatullah Aji Prabowo, Mega Agustina, M. Aldy Wildan Maulana, Irham Fadlika, Aripriharta, A.N. Afandi, Amer M.Y.M Ghias
This paper proposed a new qZSI topology called dual active-switched-capacitor qZSI (DASC-qZSI). This new proposed topology offers high voltage gain and boost factor value by using less components. In this paper, the proposed topology will be analyzed and compared with previous high boost qZSI topology. The comparison parameter in this paper including comparison of boost factor, voltage gain, inductor current ripple, diode voltage and current stress, switch and capacitor voltage stresses. The simulation also done in this paper to ensure the analysis result using MATLAB/Simulink application. © 2019 IEEE.
Universitas Negeri Malang, Dept. of Electrical Engineering, Malang, Indonesia; Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore
