Atika Sari Puspita Dewi, Rosita Kartika Putri, Nandang Mufti, Robi Kurniawan, Sunaryono Sunaryono
This study investigates the selenization temperature effect on CIGS/Si on the performance of solar cells. The deposition of CIGS on the Silicon substrate was carried out using two steps. The first step is a synthesis of CIG ink by the hot injection method. Then, the second step is the selenization of Se in pellet form using the non-vacuum evaporation method in a nitrogen gas environment. The samples were characterized by XRD and SEM-EDX. The photoresponse performance was measured by an electrometer and source meter under solar simulator illumination. The XRD results show that all CIGS films have amorphous structures. The particle size of CIGS film increases by increasing selenization temperature. Photoresponse performance improves and is more stable by rising temperature selenization. © 2023 American Institute of Physics Inc.. All rights reserved.
Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang 5, Malang, 65145, Indonesia; Center of Advanced Materials for Renewable Energy (CAMRY), Universitas Negeri Malang, Jl. Semarang 5, Malang, 65145, Indonesia