Saparullah, Nandang Mufti, Haidar Ali
There have been many scientific studies on the improvement of piezoelectric performance in the last decade. A chip of piezoelectric has a limited order of extraction power so that to increase the order of extraction power can be done by arranging several piezoelectric chips into one output. The aims of the study are to determine the most effective configuration of the multi-chips energy harvester circuit used to enhance the power extraction order of the piezoelectric and the effect of the type of diode on the output performance. The sample used in this study is a commercial piezoelectric transducer (PT) and the diode used is a silicon diode of type 1N400x and a Schottky diode of type KL4. In this study, six chips of PT were arranged in the form of a 2 x 3 array and then placed in two acrylic planes sandwich with glue pads on the edges and at the center-top of the PT to get a bending effect when a force of 20 N was applied over the top acrylic plane. The six chips of PT were arranged in series and parallel configurations and varied with the addition of a full-bridge rectifier circuit (FBR) based on silicon and Schottky diodes. The effective output power in the closed-capacitive circuit in series configurations are 0.19 mW on a silicon FBR, 0.84 mW on six FBRs, 0.14 mW on a Schottky FBR, and 0.87 on six Schottky FBRs. The effective output power in the closed-capacitive circuit in parallel configurations are 1.05 mW FBR on a silicon FBR, 1,24 mW on six silicon FBRs, 1.03 mW on a Schottky, and 0.91 on six Schottky. In general, the two types of the FBRs do not have a significant difference in performance while the configuration does. © 2023 American Institute of Physics Inc.. All rights reserved.
Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Malang, Indonesia; Centre of Material for Renewable Energy, Universitas Negeri Malang, Indonesia