Absorptivity and magentodielectric evaluations of rare earths (Gd3+, Pr3+, Ho3+) and transition element (Bi3+) doped Cd-Ni-Zn ferrite meta surface absorbers: Modeling and simulations

Closed

Majid Niaz Akhtar, Beriham Basha, Maira Younas, Sami Ullah, Asad Ur Rehman, Saif Ur Rehman, Abdullah Almohammedi, Muhammad Azhar Khan, M.S. Al-Buriahi

2025 Surfaces and Interfaces Vol. 68 Article Cited by 10 Quartile

Abstract

Developing meta-absorbers with superior electromagnetic shielding, absorption, and extraordinary dissipation capabilities continue to pose a problem in the high-frequency domain. The proliferation of high-frequency waves from electronics has significantly affected humans and others because of electromagnetic pollution. The synthesis of ferrites and the design and simulation of ferrite-based meta-absorbers are essential to tackle the problems. The ferrites with the new composition of Cd0.2Ni0.5Zn0.3XE0.02Fe1.98O4, where XE represents Bi3+, Gd3+, Pr3+, and Ho3+, were produced using the sol-gel self-ignition route. The magnetic, structural, and morphological features of Bi3+, Gd3+, Pr3+, and Ho3+ doped Cd-Ni-Zn ferrites were assessed using VSM, XRD, and FESEM methodologies. XRD patterns demonstrate the single-phase structure of the ferrite samples. The coercivity coefficients indicated the soft ferrite properties of Pr and Ho-doped Cd-Ni-Zn ferrites. Pr-doped and Ho-doped Cd-Ni-Zn ferrite displays the highest levels of imaginary permittivity, whereas Bi-doped Cd-Ni-Zn ferrite has a diminished response. In the S-band, at frequencies around 2 GHz, the Ho-doped Cd-Ni-Zn ferrite demonstrated reflection losses of -57.91 dB and -56.01, respectively. The meta-absorbers of RE-doped samples were engineered and modeled. Ho, Pr, and Gd-doped Cd-Ni-Zn meta absorbers exhibited higher absorption values. However, Bi-doped Cd-Ni-Zn meta absorbers demonstrated a lower absorptivity response for both TE and TM modes. Trivalent Bi3+, Gd3+, Pr3+, and Ho3+ doped Cd-Ni-Zn ferrites are efficacious for shielding, EMI, MLCIs, and high-frequency applications in telecommunication devices. © 2025 Elsevier B.V.

Affiliations

Institute of Physics, The Islamia University of Bahawalpur, Bahawalpur; Mechanical and Industrial Engineering Department, Engineering Faculty, Universitas Negeri Malang, 65145, Indonesia; Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh, 11671, Saudi Arabia; Department of Chemistry, College of Science, King Khalid University, P.O.Box 960, Abha, 61421, Saudi Arabia; Euromed Research Center, Euro-Mediterranean University of Fes, Route de Meknes, Rond-Point de Bensouda, B. P. 51, Fes, 30030, Morocco; Department of Physics, COMSATS University Islamabad, Lahore Campus, Lahore, 54000, Pakistan; Department of Physics, Faculty of Science, Islamic University of Madinah, Madinah, Saudi Arabia; Department of Physics, Sakarya University, Sakarya, Turkey; Research Center for Advanced Materials Science (RCAMS), King Khalid University, P.O. Box 960, Abha, 61421, Saudi Arabia