Crystallization Behavior of Ambient-Air-Processed CsPbBr3Thin Films on Various Electron Transport Layers and Its Impact on Solar Cell Performance

Closed

Annisa Nandhita Kurniawati, Xorell Ivanov Monov, Bening Tirta Muhammad, Prima Fitri Rusliani, Phutri Milana, Roni Adi Wijaya, Ahmad Ibrahim, Shobih, Natalita Maulani Nursam, Gunawan, Nandang Mufti, Veinardi Suendo, Lydia Helena Wong, Kartika Sari, Brian Yuliarto, Wilman Septina

2025 Journal of Physical Chemistry C Vol. 129 Issue 43 Article Cited by 3 Quartile

Abstract

CsPbBr3perovskite is a promising wide-bandgap semiconductor for photovoltaic applications, but its crystallization dynamics and charge transport properties are highly dependent on interfacial interactions with electron transport layers (ETLs). This study systematically investigates the influence of ETLs: SnO2, TiO2, and In2S3, on the crystallization, morphology, and photovoltaic performance of CsPbBr3thin films processed under ambient-air conditions. The choice of ETL is found to significantly affect the structural evolution of the PbBr2precursor and the final CsPbBr3film, impacting the device efficiency. Among the studied ETLs, SnO2promotes the formation of compact and uniform CsPbBr3films, leading to the highest power conversion efficiency (PCE) of 5.05%. In comparison, TiO2-based devices exhibit a moderate efficiency of 3.44% due to suboptimal film flatness, whereas In2S3results in small-grained films with high defect densities, limiting the efficiency to 0.70%. Photoluminescence and impedance spectroscopy analyses further confirm that SnO2effectively suppresses defect-mediated recombination, enhancing charge transport and extraction. These findings underscore the crucial role of ETL selection in optimizing CsPbBr3crystallization and provide valuable insights for developing efficient wide-bandgap perovskite solar cells under ambient conditions. © 2025 American Chemical Society

Affiliations

Department of Physics, Jenderal Soedirman University, Jalan Dr. Suparno 67 Karangwangkal, Central Java, Purwokerto, 53123, Indonesia; Research Center for Electronics, National Research and Innovation Agency (BRIN), Jl. Cisitu, Bandung, 40135, Indonesia; Advanced Functional Materials Research Group (AFM Laboratory), Bandung Institute of Technology, Jalan Ganesha 10, Bandung, 40132, Indonesia; Department of Chemistry, Universitas Negeri Jakarta, Jakarta Timur, 13220, Indonesia; Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, Singapore, 637553, Singapore; Department of Chemistry, Diponegoro University, Jl. Prof. Sudarto SH Tembalang, Semarang, 50275, Indonesia; Department of Physics, Universitas Negeri Malang, Jl. Semarang 5, Malang, 65145, Indonesia; Inorganic and Physical Chemistry Research Division, Department of Chemistry, Bandung Institute of Technology, Jalan Ganesha 10, Bandung, 40132, Indonesia; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore